TDRAM is a new DRAM microarchitecture designed specifically for caching purposes. It enhances HBM3 by adding a set of small low-latency mats to store tags and metadata on the same die as the data mats. These tag mats enable fast parallel tag and data access, on-DRAM-die tag comparison, and conditional data response based on the comparison result, similar to SRAM caches.
TDRAM extends the HBM3 interface with a unidirectional Hit-Miss (HM) bus to transfer the tag check result and metadata to the controller, decoupling them from data transfer. It also adds two new commands, ActRd and ActWr, which access both tag and data mats in lockstep. These commands check the tag for the block and only send data to the controller when it is needed.
TDRAM further optimizes performance by implementing early tag probing, which opportunistically performs tag checks in otherwise unused command and HM bus slots. This reduces request queue occupancy time by removing misses from the queue early, allowing other demands to proceed with fewer stalls.
TDRAM also introduces a flush buffer to store conflicting dirty data on write misses, eliminating costly turnaround delays on the data bus and immediate cache line data transfer to the controller for write requests. TDRAM opportunistically sends the dirty data in the flush buffer to the controller when the data bus is idle or in read-state.
Evaluation results show that TDRAM provides at least 2.6x faster tag check, 1.2x speedup, and 21% less energy consumption compared to state-of-the-art commercial and research DRAM cache designs.
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by Maryam Babai... um arxiv.org 04-24-2024
https://arxiv.org/pdf/2404.14617.pdfTiefere Fragen